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K4B2G0846B-HCK0

K4B2G0846B-HCK0

说明

      DRAM的消费者是专为消费电子设备,如数字电视,DVD播放机/录像机,机顶盒,数码摄像机,硬盘驱动器,打印机,存储和网络设备,汽车电器,和许多其他使用。DRAM是部署在几乎所有的高端数字消费电子和工业应用的今天,不同版本的DRAM的消费者,如在这类应用中使用的SDRAM,DDR DRAM,DDR2内存和DDR3 DRAM,事实上的内存。在消费DRAM市场的设备范围,是伴随着工业领域类似的范围。这种装置有能力承受更广泛的工作温度,电源电压波动。

      等先进功能, 数据组织,密度,数据率/针,带宽,连接接口,时钟和选通机制,电源电压,可用的软件包任何消费DRAM的一些关键特性。作为世界领先的供应商和内存技术的创新之一,三星电子已跻身第一,今天的消费和工业应用最广泛的产品组合,以提供最广泛的DRAM记忆体解决方案。三星消费DRAM是在不同的应用领域广泛,在商业和工业温度版本,容量和密度,正常,低功耗,以及超级低功耗运行模式的支持。

General Description

    Consumer DRAM is designed specifically for use in consumer electronic devices, such as digital TVs, DVD players/recorders, set-top boxes, digital still and video cameras, hard disk drives, printers, storage and networking equipment, automotive appliances, and many others. DRAM is the de-facto memory deployed in virtually all high-end digital consumer and industrial applications in use today, with different versions of consumer DRAM, such as SDRAM, DDR DRAM, DDR2 DRAM, and DDR3 DRAM, being utilized in such applications. The range of devices in the consumer DRAM segment is accompanied by an analogous range for the industrial segment. Such devices have advanced features, such as capabilities to withstand much wider operating temperatures, and higher fluctuations in supply voltages. 

    Data organization, density, data rate/pin, bandwidth, connection interfaces, clocking and strobing mechanisms, power supply voltages, and available packages are some of the key characteristics of any consumer DRAM. As one of the world’s leading suppliers and innovators in memory technology, Samsung has been among the first to provide the broadest range of DRAM memory solutions for the widest portfolio of today’s consumer and industrial applications. Samsung consumer DRAM is available in varying capacities and densities for an extensive range of application segments, in both commercial and industrial temperature versions, with support for Normal, Low Power, and Super Low Power operating modes.

Specifications/规格

Production Status Mass Production
Density 2Gb
Organization 256Mx8
Refresh 8K/64ms
Speed F8,H9,K0
Power C,L
Bank/ Interface 8B/SSTL_1.5
Package 78FBGA

Features/参数

• JEDEC standard 1.5V ± 0.075V Power Supply
• VDDQ = 1.5V ± 0.075V
• 400 MHz fCK for 800Mb/sec/pin, 533MHz fCK for 1066Mb/sec/pin,
667MHz fCK for 1333Mb/sec/pin, 800MHz fCK for 1600Mb/sec/pin
• 8 Banks
• Programmable CAS Latency(posted CAS): 5, 6, 7, 8, 9, 10, 11
• Programmable Additive Latency: 0, CL-2 or CL-1 clock
• Programmable CAS Write Latency (CWL) = 5 (DDR3-800), 6
(DDR3-1066), 7 (DDR3-1333) and 8 (DDR3-1600)
• 8-bit pre-fetch
• Burst Length: 8 (Interleave without any limit, sequential with starting
address “000” only), 4 with tCCD = 4 which does not allow seamless
read or write [either On the fly using A12 or MRS]
• Bi-directional Differential Data-Strobe
• Internal(self) calibration : Internal self calibration through ZQ pin
(RZQ : 240 ohm ± 1%)
• On Die Termination using ODT pin
• Average Refresh Period 7.8us at lower than TCASE 85°C, 3.9us at
85°C < TCASE < 95 °C
• Asynchronous Reset
• Package : 78 balls FBGA - x4/x8
96 balls FBGA - x16
• All of Lead-Free products are compliant for RoHS
• All of products are Halogen-free
The 2Gb DDR3 SDRAM B-die is organized as a 64Mbit x 4 I/Os x 8banks,
32Mbit x 8 I/Os x 8banks or 8Mbit x 16 I/Os x 8 banks device. This synchronous
device achieves high speed double-data-rate transfer rates of up to
1600Mb/sec/pin (DDR3-1600) for general applications.
The chip is designed to comply with the following key DDR3 SDRAM features
such as posted CAS, Programmable CWL, Internal (Self) Calibration,
On Die Termination using ODT pin and Asynchronous Reset .
All of the control and address inputs are synchronized with a pair of externally
supplied differential clocks. Inputs are latched at the crosspoint of differential
clocks (CK rising and CK falling). All I/Os are synchronized with a
pair of bidirectional strobes (DQS and DQS) in a source synchronous fashion.
The address bus is used to convey row, column, and bank address
information in a RAS/CAS multiplexing style. The DDR3 device operates
with a single 1.5V ± 0.075V power supply and 1.5V ± 0.075V VDDQ.
The 2Gb DDR3 B-die device is available in 78ball FBGAs(x4/x8) and
96balls FBGA(x16).
NOTE : 1. This data sheet is an abstract of full DDR3 specification and does not cover the common features which are described in “DDR3 SDRAM Device Operation & Timing
Diagram”.
2. The functionality described and the timing specifications included in this data sheet are for the DLL Enabled mode of operation.

 

K4B2G0846B—数据表.pdf

 K4B2G1646B-HCF8  K4B2G0846B-HYF8
K4B2G0846B-HCH9  K4B2G0846B-HCF8
SAMSUNG DDR3   

   上海银洋电子有限公司是一家经销ST意法半导体SAMSUNG微处理器和Dream音源DSP等国际知名半导体元器件,产品微控制器,DSP数字信号处理器,EEPROM非易失存储器,混合信号IC等等,主要产品涉及行业有电源、家电、PDA、音响功放、电话机、移动通讯、闪光灯、节能灯、电表、电脑及其周边设备、PDA、照相机、手机、太阳能等市场。

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